Q. The high density FLASH memory cell is implemented using (Solved)
1. 1 floating-gate mos transistor
2. 2 floating- gate mos transistors
3. 4 floating- gate mos transistors
4. 6 floating- gate mos transistors
- a. 1 floating-gate mos transistor
1. 1 floating-gate mos transistor
2. 2 floating- gate mos transistors
3. 4 floating- gate mos transistors
4. 6 floating- gate mos transistors