Top 150+ Solved Radiation and Microwave Techniques MCQ Questions Answer

From 16 to 30 of 168

Q. range of

a. hz

b. khz

c. mhz

d. ghz

  • d. ghz

Q. In rectangular waveguides, the dimensions a and b represent the

a. broad wall dimensions

b. broad wall and side wall dimension respectively

c. side wall and broad wall dimension respectively

d. side wall dimensions

  • b. broad wall and side wall dimension respectively

Q. The cut off frequency for a waveguide to operate is

a. 3 mhz

b. 3 ghz

c. 6 mhz

d. 6 ghz

  • d. 6 ghz

Q. In transverse electric waves, which of the following is true?

a. e is parallel to h

b. e is parallel to wave direction

c. e is transverse to wave direction

d. h is transverse to wave direction

  • c. e is transverse to wave direction

Q. The dominant mode in rectangular waveguide is

a. te01

b. te10

c. tm01

d. tm10

  • b. te10

Q. The propagation constant for a lossless transmission line will be

a. real

b. complex

c. real and equal to phase constant

d. complex and equal to phase constant

  • d. complex and equal to phase constant

Q. Which of the following parameter is non zero for a lossless line?

a. attenuation

b. resistance

c. conductance

d. phase constant

  • d. phase constant

Q. The phase and group velocities does not depend on which of the following?

a. frequency

b. wavelength

c. phase constant

d. attenuation constant

  • d. attenuation constant

Q. amplifier.

a. linear beam

b. crossed field

c. parallel field

d. none of the mentioned

  • a. linear beam

Q. reflector electrode after the cavity.

a. backward wave oscillator

b. reflex klystron

c. travelling wave tube

d. magnetrons

  • b. reflex klystron

Q. A major disadvantage of klystron amplifier is:

a. low power gain

b. low bandwidth

c. high source power

d. design complexity

  • b. low bandwidth

Q. The material out of which PIN diode is made is:

a. silicon

b. germanium

c. gaas

d. none of the mentioned

  • a. silicon

Q. GaAs is used in the fabrication of GUNN diodes because:

a. gaas is cost effective

b. it less temperature sensitive

c. it has low conduction band electrons

d. less forbidden energy gap

  • d. less forbidden energy gap

Q. GaAs is used in fabricating Gunn diode. Gunn diode is:

a. bulk device

b. sliced device

c. made of different type of semiconductor layers

d. none of the mentioned

  • a. bulk device

Q. The mode of operation in which the Gunn diode is not stable is:

a. gunn oscillation mode

b. limited space charge accumulation mode

c. stable amplification mode

d. bias circuit oscillation mode

  • a. gunn oscillation mode
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