Top 1000+ Solved Material Science MCQ Questions Answer
Q. the magnitude of lattice distortion in edge dislocation si near the dislocation as compared to region away from dislocation
a. constant
b. lower
c. higher
d. varies randomly
Q. the magnitude of edge dislocation in a lattice structure can be measured by
a. miller indices
b. burgers vector
c. microscope
d. none of the above
Q. linear defects increase and Decrease
a. hardness, electrical conductivity
b. electrical conductivity, hardness
c. hardness, electrical resistance
d. electrical resistance, hardness
Q. surface defects are
a. one dimensional defect
b. two dimensional defect
c. theree dimensional defect
d. none of the above
Q. surafec defects are associated with
a. defects within same crystal structure with different orientation of atomic planes
b. defects within adjacent region consisting of different crystal structure
c. defects within adjacent region consisting of same crystal structure
d. any of the above
Q. the surface defects are introduced in the material during of material
a. solidificatio n
b. heat treatment
c. plastic deformation
d. all of the above
Q. the is defect that causes sepeartion of grain
a. grain boundary
b. twin boundary
c. stacking faults
d. none of the above
Q. a garin boundary represents
a. one dimensional defect
b. zero dimensional defect
c. two dimenstiona l defect
d. none of the above
Q. a garin boundary is a transition region which represents _
a. imperfectio ns in arrengement of atoms
b. foreign atom located in th region
c. region with unique crystal structure
d. none of the above
Q. the defect which has mirror image of atomic arrangement across the dislocation is called
a. grain boundary defect
b. stacking faults
c. low angle boundary defect
d. twin boundary defect
Q. the twin is the region
a. before and after the dialocation
b. between the atomic arrangmnets that has formed mirror image
c. low angle boundary defect
d. twin boundary defect
Q. in a given material adjacent grains will have
a. same crystal structure
b. different crystal
c. same crystal structure
d. a or b
Q. the defect associated with slight mismatch of crystalline orientation from one grain to adjacent grain is called
a. gtrain boundaries defect
b. twinn boundaries defect
c. low angle boundary defect
d. stacking faults
Q. the low angle boundary defect is assocaited with
a. high mismatch of crystalline orientation from one grain to adjacent grain
b. slight mismatch of crystalline orientation from one grain to adjacent grain
c. stacking mismatch of atomic planes
d. stacking faults
Q. the stacking fault defect is assocaited with
a. erroe in sequence of close- packed atomic planes
b. slight mismatch of crystalline orientation from one grain to adjacent grain
c. error in stacking of electrons in atomic structure
d. none of the above