Top 350+ Solved Digital Electronics MCQ Questions Answer
Q. Address decoding for dynamic memory chip control may also be used for
a. chip selection and address location
b. read and write control
c. controlling refresh circuits
d. memory mapping
Q. Which of the following describes the action of storing a bit of data in a mask ROM?
a. a 0 is stored by connecting the gate of a mos cell to the address line
b. a 0 is stored in a bipolar cell by shorting the base connection to the address line
c. a 1 is stored by connecting the gate of a mos cell to the address line
d. a 1 is stored in a bipolar cell by opening the base connection to the address line
Q. The check sum method of testing a ROM
a. allows data errors to be pinpointed to a specific memory location
b. provides a means for locating and correcting data errors in specific memory locations
c. indicates if the data in more than one memory location is incorrect
d. simply indicates that the contents of the rom are incorrect
Q. The initial values in all the cells of an EPROM is
a. 0
b. 1
c. both 0 and 1
d. alternate 0s and 1s
Q. To store 0 in such a cell, the floating point must be
a. reprogrammed
b. restarted
c. charged
d. power off
Q. The major disadvantage of RAM is?
a. its access speed is too slow
b. its matrix size is too big
c. it is volatile
d. high power consumption
Q. Which one of the following is used for the fabrication of MOS EPROM?
a. tms 2513
b. tms 2515
c. tms 2516
d. tms 2518
Q. To read from the memory, the select input and the power down/program input must be
a. high
b. low
c. sometimes high and sometimes low
d. alternate high and low
Q. When a RAM module passes the checker board test it is
a. able to read and write only 0s
b. faulty
c. probably good
d. able to read and write only 1s
Q. What is the difference between static RAM and dynamic RAM?
a. static ram must be refreshed, dynamic ram does not
b. there is no difference
c. dynamic ram must be refreshed, static ram does not
d. sram is slower than dram
Q. What is access time?
a. the time taken to move a stored word from one bit to other bits after applying the address bits
b. the time taken to write a word after applying the address bits
c. the time taken to read a stored word after applying the address bits
d. the time taken to erase a stored word after applying the address bits
Q. What are the typical values of tOE?
a. 10 to 20 ns for bipolar
b. 25 to 100 ns for nmos
c. 12 to 50 ns for cmos
d. all of the mentioned