Top 80+ Solved Antennas and Microwave Engineering MCQ Questions Answer

From 46 to 60 of 70

Q. GaAs is used in the fabrication of GUNN diodes because:

a. gaas is cost effective

b. it less temperature sensitive

c. it has low conduction band electrons

d. less forbidden energy gap

  • d. less forbidden energy gap

Q. When the electric field applied to GaAs specimen is less than the threshold electric field, the current in the material:

a. increases linearly

b. decreases linearly

c. increases exponentially

d. decreases exponentially

  • a. increases linearly

Q. GaAs is used in fabricating Gunn diode. Gunn diode is:

a. bulk device

b. sliced device

c. made of different type of semiconductor layers

d. none of the mentioned

  • a. bulk device

Q. The electrodes of a Gunn diode are made of:

a. molybdenum

b. gaas

c. gold

d. copper

  • a. molybdenum

Q. When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential              is developed in that bulk device.

a. negative resistance

b. positive resistance

c. negative voltage

d. none of the mentioned

  • a. negative resistance

Q. The number of modes of operation for n type GaAs is:

a. two

b. three

c. four

d. five

  • c. four

Q. The free electron concentration in N-type GaAs is controlled by:

a. effective doping

b. bias voltage

c. drive current

d. none of the mentioned

  • a. effective doping

Q. The mode of operation in which the Gunn diode is not stable is:

a. gunn oscillation mode

b. limited space charge accumulation mode

c. stable amplification mode

d. bias circuit oscillation mode

  • a. gunn oscillation mode

Q. The frequency of oscillation in Gunn diode is given by:

a. vdom/ leff

b. leff/ vdom

c. leff/ wvdom

d. none of the mentioned

  • a. vdom/ leff

Q. 3 IMPATT DIODES, SCHOTTKY BARRIER DIODES, PIN DIODES

a. avalanche multiplication

b. break down of depletion region

c. high reverse saturation current

d. none of the mentioned

  • a. avalanche multiplication
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