Top 80+ Solved Antennas and Microwave Engineering MCQ Questions Answer
Q. GaAs is used in the fabrication of GUNN diodes because:
a. gaas is cost effective
b. it less temperature sensitive
c. it has low conduction band electrons
d. less forbidden energy gap
Q. When the electric field applied to GaAs specimen is less than the threshold electric field, the current in the material:
a. increases linearly
b. decreases linearly
c. increases exponentially
d. decreases exponentially
Q. GaAs is used in fabricating Gunn diode. Gunn diode is:
a. bulk device
b. sliced device
c. made of different type of semiconductor layers
d. none of the mentioned
Q. When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential is developed in that bulk device.
a. negative resistance
b. positive resistance
c. negative voltage
d. none of the mentioned
Q. The free electron concentration in N-type GaAs is controlled by:
a. effective doping
b. bias voltage
c. drive current
d. none of the mentioned
Q. The mode of operation in which the Gunn diode is not stable is:
a. gunn oscillation mode
b. limited space charge accumulation mode
c. stable amplification mode
d. bias circuit oscillation mode
Q. The frequency of oscillation in Gunn diode is given by:
a. vdom/ leff
b. leff/ vdom
c. leff/ wvdom
d. none of the mentioned
Q. 3 IMPATT DIODES, SCHOTTKY BARRIER DIODES, PIN DIODES
a. avalanche multiplication
b. break down of depletion region
c. high reverse saturation current
d. none of the mentioned